Nickel monosilicide
Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.
Identifiers | |
---|---|
3D model (JSmol) |
|
PubChem CID |
|
CompTox Dashboard (EPA) |
|
| |
| |
Properties | |
NiSi | |
Molar mass | 86.778 g/mol |
Structure[1] | |
Orthorhombic, oP8 | |
Pnma, No. 62 | |
a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm | |
Formula units (Z) |
4 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
Infobox references | |
Preparation
Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni2Si at 250 °C followed by NiSi at 350 °C and NiSi2 at approximately 800 °C.[2]
For ultra-thin nickel films, with thicknesses below 4 nm, nickel monosilicide is formed at lower annealing temperatures of 230 °C - 290 °C.[3]
Uses
Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced thermal budget, low resistivity of 13-14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.[4]
References
- Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810
- d'Heurle, F. M.; Gas, P. (February 1986). "Kinetics of formation of silicides: A review". Journal of Materials Research. 1 (1): 205–221. doi:10.1557/JMR.1986.0205. ISSN 2044-5326. Archived from the original on 2020-10-17. Retrieved 2020-10-16.
- Tran, Tuan T.; Lavoie, Christian; Zhang, Zhen; Primetzhofer, Daniel (January 2021). "In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide". Applied Surface Science. 536: 147781. doi:10.1016/j.apsusc.2020.147781. S2CID 219981123. Archived from the original on 2020-10-17. Retrieved 2020-10-16.
- Lavoie, C.; d’Heurle, F.M.; Detavernier, C.; Cabral, C. (November 2003). "Towards implementation of a nickel silicide process for CMOS technologies". Microelectronic Engineering. 70 (2–4): 144–157. doi:10.1016/S0167-9317(03)00380-0. Archived from the original on 2018-07-03. Retrieved 2020-10-16.