Niemeyer–Dolan technique

The Niemeyer–Dolan technique, also called the Dolan technique or the shadow evaporation technique, is a thin-film lithographic method to create nanometer-sized overlapping structures.

Niemeyer–Dolan technique for the fabrication of single electron transistors. (a) Side view, cut along the current path. (b) Side view, cut perpendicular to the current path, and showing the resist mask and the layers deposited on it during the evaporations. (c) Top view, indicating the cut planes for views a and b.

This technique uses an evaporation mask that is suspended above the substrate (see figure). The evaporation mask can be formed from two layers of resist. Depending on the evaporation angle, the shadow image of the mask is projected onto different positions on the substrate. By carefully choosing the angle for each material to be deposited, adjacent openings in the mask can be projected on the same spot, creating an overlay of two thin films with a well-defined geometry.[1][2][3]

Usage

The Niemeyer–Dolan technique is used to create thin-film electronic nanostructures such as quantum dots and tunnel junctions.

References
  1. J. Niemeyer, PTB-Mitt. 84, 251 (1974)
  2. Niemeyer, J.; Kose, V. (1976-09-15). "Observation of large dc supercurrents at nonzero voltages in Josephson tunnel junctions". Applied Physics Letters. AIP Publishing. 29 (6): 380–382. doi:10.1063/1.89094. ISSN 0003-6951.
  3. Dolan, G. J. (1977-09-01). "Offset masks for lift‐off photoprocessing". Applied Physics Letters. AIP Publishing. 31 (5): 337–339. doi:10.1063/1.89690. ISSN 0003-6951.
This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.