Trimethylgallium

Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid.[1] Unlike trimethylaluminium, but akin to trimethylindium, TMG is monomeric.[2]

Trimethylgallium
Names
IUPAC name
trimethylgallane, trimethanidogallium
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.014.452
Properties
Ga(CH3)3
Molar mass 114.827 g/mol
Appearance clear colourless liquid
Melting point −15 °C (5 °F; 258 K)
Boiling point 55.7 °C (132.3 °F; 328.8 K)
Hazards
Main hazards pyrophoric
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Preparation

TMG is prepared by the reaction of gallium trichloride with various methylating agents. These include methyl lithium,[1] dimethylzinc, and trimethylaluminium.[3] The less volatile diethyl ether adduct can be prepared by using methylmagnesium iodide in ether. The ether ligands may be displaced with liquid ammonia as well.[4]

Applications

TMG is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN, AlGaInP, InGaP and AlInGaNP.[5] These material are used in the production of LED lighting and semiconductors as a metalorganic chemical vapor deposition precursor.

References
  1. Bradley, D. C.; Chudzynska, H. C.; Harding, I. S. (1997). "Trimethylindium and Trimethylgallium". Inorganic Syntheses. 31: 67–74. doi:10.1002/9780470132623.ch8.
  2. Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.
  3. Gaines, D. F.; Borlin, Jorjan; Fody, E. P. (1974). "Trimethylgallium". Inorganic Syntheses. 15: 203–207. doi:10.1002/9780470132463.ch45.
  4. Kraus, C. A.; Toonder, F. E. (1933). "Trimethyl Gallium, Trimethyl Gallium Etherate and Trimethyl Gallium Ammine". PNAS. 19 (3): 292–8. Bibcode:1933PNAS...19..292K. doi:10.1073/pnas.19.3.292. PMC 1085965. PMID 16577510.
  5. Shenai-Khatkhate, D. V.; Goyette, R. J.; Dicarlo, R. L. Jr; Dripps, G. (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–21. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.
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