Trimethylsilane

Trimethylsilane is the organosilicon compound with the formula (CH3)3SiH. It is a trialkylsilane. The Si-H bond is reactive. It is less commonly used as a reagent than the related triethylsilane, which is a liquid at room temperature.

Trimethylsilane
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.012.366
UNII
Properties
C3H10Si
Molar mass 74.198 g·mol−1
Density 0.638 g cm−3
Melting point −135.9 °C (−212.6 °F; 137.2 K)
Boiling point 6.7 °C (44.1 °F; 279.8 K)
Hazards
F
R-phrases (outdated) R12, R36/37/38
S-phrases (outdated) S9, S16, S26, S33
NFPA 704 (fire diamond)
Flammability code 4: Will rapidly or completely vaporize at normal atmospheric pressure and temperature, or is readily dispersed in air and will burn readily. Flash point below 23 °C (73 °F). E.g. propaneHealth code 2: Intense or continued but not chronic exposure could cause temporary incapacitation or possible residual injury. E.g. chloroformReactivity code 1: Normally stable, but can become unstable at elevated temperatures and pressures. E.g. calciumSpecial hazards (white): no code
4
2
1
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

Trimethylsilane is used in the semi-conductor industry as precursor to deposit dielectrics and barrier layers via plasma-enhanced chemical vapor deposition (PE-CVD).[1] It is also used a source gas to deposit TiSiCN hard coatings via plasma-enhanced magnetron sputtering (PEMS). It has also been used to deposit silicon carbide hard coatings via low-pressure chemical vapor deposition (LP-CVD) at relatively low temperatures <1000 °C. It is an expensive gas but safer to use than silane (SiH4); and produces properties in the coatings that cannot be undertaken by multiple source gases containing silicon and carbon.

See also

References
  1. Chen, Sheng-Wen; Wang, Yu-Sheng; Hu, Shao-Yu; Lee, Wen-Hsi; Chi, Chieh-Cheng; Wang, Ying-Lang (2012). "A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films". Materials. 5 (3): 377. doi:10.3390/ma5030377. PMC 5448926. PMID 28817052.


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