Changxin Memory Technologies

Together with JHICC (Fujian Jinhua Integrated Circuit) and Xi'an UniIC Semiconductors, Innotron was one of a set of Chinese semiconductor plants established in 2016 to compete with global manufacturers of computer memory.[1][2][3] In early 2017, a $7.2 billion deal for a 125,000, 12" (300mm) wafer per month production fabrication plant was announced.[4] Innotron's factory was completed by mid-2017[2] and production equipment was installed at the plant in late 2017. Trials and mass production were scheduled for late 2018 and early 2019.[5][6] In late 2018, CEO Zhu Yiming was reported to have visited ASML to discuss the purchase of extreme ultraviolet lithography machines.[6]

Initially, Innotron was thought to have chosen 8Gb LPDDR4 memory as its first product. At the time, analysts claimed that patent and IP issues would present a barrier to its competing with major manufacturers.[2] In mid-2018, trial production of 19 nm 8Gb LPDDR4 was reported to have begun.[7] Innotron's initial capacity was ~20,000 wafers per month, a small output in terms of the industry as a whole.[1]

In mid 2019 Innotron, which had changed its name to Changxin Memory Technologies, was reported to have made some design changes in an attempt to avoid possible technology related sanctions deriving from the China–United States trade war.[8]

In Dec 2019 in an interview with EE Times the company stated its first Fab was in productions, and producing 20,000 wafers per month, making 8Gbit LPDDR4 and DDR4 DRAM at 19 nm.[9]

The company is reported to increase production to 3% of world DRAM output, or about 40,000 wafers a month by the end of 2020.[10]

As of late 2019 CXMT has over 3,000 employees and runs a fab with a 65,000 square meters clean room space. Over 70% of its employees are engineers working on various R&D-related projects. CXMT uses its 10G1 process technology (aka 19 nm) to make 4 Gb and 8 Gb DDR4 memory chips.[11]

LPDDR4 RAM was added to the product porfolio in 2020.[12]

• www.cxmt.com