1 µm process

The 1 μm process refers to the level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

Semiconductor device fabrication
MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977  1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm – ~2022 002 nm – >2023
Half-nodes Density CMOS Device (multi-gate) Moore's law Semiconductor Industry Nanoelectronics

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]